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T1G6001528-Q3 dc ? 6 ghz 18 w gan rf power transistor preliminary data sheet: rev - a 06/14/2011 - 1 of 15 - disclaimer: sub j ect to chan g e without notice applications ? general purpose rf power ? jammers ? military and civilian radar ? professional and military radio systems ? wideband amplifiers ? test instrumentation ? avionics product features functional block diagram ? frequency: dc to 6 ghz ? output power (p3db): 18 w at 6 ghz ? linear gain: >10 db at 6 ghz ? operating voltage: 28 v ? low thermal resistance package general description pin configuration the triquint T1G6001528-Q3 is a 18 w (p3db) discrete gan on sic hemt which operates from dc to 6 ghz and typically provides >10 db gain at 6 ghz. the device is constructed with triquint?s proven 0.25 m process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. this optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. lead-free and rohs compliant evaluation boards are available upon request. pin # symbol 1 vd/rf out 2 vg/rf in flange source ordering information part no. eccn description T1G6001528-Q3 ear99 packaged transistor T1G6001528-Q3 evb1 ear99 5-6 ghz eval board 2 1 2 1 ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ?
T1G6001528-Q3 dc ? 6 ghz 18 w gan rf power transistor preliminary data sheet: rev - a 06/14/2011 - 2 of 15 - disclaimer: sub j ect to chan g e without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? specifications absolute maximum ratings parameter rating drain voltage,vd +40 v gate voltage,vg -50 to 0 v drain to gate voltage, vd ? vg 80 v drain current, id 1.5 a gate current, ig -25 to 25 ma power dissipation, pdiss 26 w rf input power, cw, t = 25oc 37 dbm channel temperature, tch 250 o c mounting temperature (30 seconds) 260 o c storage temperature -40 to 150 o c absolute maximum ratings at 3 ghz. operation of this device outsi de the parameter ranges given above may cause permanent damage. these are stress ratings only, and functional opera tion of the device at these conditions is not implied. recommended operating conditions parameter min typical max units vd 28 30 v idq 50 ma id_drive (under rf drive) 1400 ma vg -3.7 v channel temperature, tch 200 o c electrical specifi cations are measured at sp ecified test conditions. specifications are not guaranteed over all recommended operating conditions. electrical specifications test conditions unless ot herwise noted: 25 oc, vd = 28 v, idq = 50 ma, vg = -3.7 v typical . rf characteristics symbol min typ max units load pull performance at 3 ghz (v ds =28v, i dq = 50ma, cw) linear gain g lin 15.0 db output power at 3 db gain compression p 3db 20.0 w drain efficiency at 3 db gain compression de 3db 60 % power-added efficiency at 3 db gain compression pae 3db 56 % gain at 3 db compression g 3db 12.5 db load pull performance at 6 ghz (v ds =28v, i dq = 50ma, cw) linear gain g lin 11.5 db output power at 3 db gain compression p 3db 19.0 w drain efficiency at 3 db gain compression de 3db 60 % power-added efficiency at 3 db gain compression pae 3db 52 % gain at 3 db compression g 3db 8.5 db performance at 5.4 ghz in the 5-6 ghz fixture (v ds =28v, i dq = 50ma, pulse:100s 20%) linear gain g lin 9.0 9.5 db output power at 3 db gain compression p 3db 17.8 21.0 w drain efficiency at 3 db gain compression de 3db 50 58 % power-added efficiency at 3 db gain compression pae 3db 40 45 % gain at 3 db compression g 3db 6.0 6.5 db narrowband performance at 3.5 ghz ( v ds =28v, i d q = 50ma , cw at p1db, applied for 3.5 secs) impedance mismatch ruggedness vswr 10:1 note: vswr testing performed with increasing real impe dance value only from referen ce z to 10 times reference z.
T1G6001528-Q3 dc ? 6 ghz 18 w gan rf power transistor preliminary data sheet: rev - a 06/14/2011 - 3 of 15 - disclaimer: sub j ect to chan g e without notice specifications (cont.) thermal and reliability information parameter condition rating thermal resistance, jc , measured to back of package tbase = 85 c jc = 5.0 c/w channel temperature (tch), and median lifetime (tm) tbase = 85 c, vd = 28 v, idq = 50 ma, pdiss = 1.4 w tch = 92 c tm = 2.4 e+10 hours channel temperature (tch), and median lifetime (tm) under rf drive tbase = 85 c, vd = 28 v, id = 1400 ma, pout = 43.5 dbm, pdiss = 21.8 w tch = 195 c tm = 2.2 e+6 hours 1e+04 1e+05 1e+06 1e+07 1e+08 1e+09 1e+10 1e+11 1e+12 1e+13 1e+14 1e+15 25 50 75 100 125 150 175 200 225 250 275 median lifetime, tm (hours) channel temperature, tch (c) median lifetime (tm) vs. channel temperature (tch) fet7 0 20 40 60 80 100 120 140 160 180 200 1.00e-07 1.00e-06 1.00e-05 1.00e-04 1.00e-03 1.00e-02 1.00e-01 max channel temperature (c) pulse width (sec) max channel temperature tbase = 85 c, pdiss = 3 w/mm 5% duty cycle 25% duty cycle 50% duty cycle ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ?
T1G6001528-Q3 dc ? 6 ghz 18 w gan rf power transistor preliminary data sheet: rev - a 06/14/2011 - 4 of 15 - disclaimer: sub j ect to chan g e without notice load pull smith chart load pull data v ds = 28v, i dq = 50ma ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? 3.2 8 16 32 80 j3.2 -j3.2 0 j8 -j8 0 j16 -j16 0 j32 -j32 0 j80 -j80 0 6000mhz 1000mhz z l eff 6000mhz 6000mhz 1000mhz 6000mhz 1000mhz z l cmp z l pow 1000mhz
T1G6001528-Q3 dc ? 6 ghz 18 w gan rf power transistor preliminary data sheet: rev - a 06/14/2011 - 5 of 15 - disclaimer: sub j ect to chan g e without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? load pull data rf performance that the device typically ex hibits when placed in the specified impedance environment. the impedances are not the impedances of the device, they are the impedances presen ted to the device via an rf circuit or load-pull system. the impedances listed follow an optimized trajectory to maintain high power and high efficiency (zlcmp). test conditions: v ds =28v, i dq = 50ma freq. [mhz] real(zs) imag(zs) real(zl) imag(zl) g3db [db] p3db [dbm] p3db [w] pae @3db[%] 1000 3.20 12.00 14.30 -1.20 19.5 42.5 17.8 55.4 1100 3.20 10.38 13.92 -1.26 19.2 42.6 18.0 55.8 1200 3.20 8.95 13.53 -1.31 18.9 42.6 18.2 56.1 1300 3.20 7.70 13.15 -1.37 18.5 42.7 18.5 56.2 1400 3.20 6.60 12.77 -1.42 18.2 42.7 18.7 56.3 1500 3.20 5.65 12.39 -1.48 17.9 42.8 18.9 56.3 1600 3.20 4.82 12.00 -1.53 17.6 42.8 19.1 56.2 1700 3.20 4.11 11.62 -1.59 17.3 42.9 19.3 56.1 1800 3.20 3.49 11.24 -1.64 16.9 42.9 19.6 55.9 1900 3.20 2.96 10.85 -1.70 16.6 43.0 19.8 55.6 2000 3.20 2.50 10.47 -1.75 16.3 43.0 20.0 55.4 2100 3.20 2.09 10.29 -2.27 15.9 43.0 20.1 55.2 2200 3.20 1.72 10.10 -2.79 15.5 43.0 20.2 54.9 2300 3.20 1.38 9.92 -3.31 15.2 43.1 20.3 54.7 2400 3.20 1.05 9.73 -3.83 14.8 43.1 20.4 54.5 2500 3.20 0.71 9.55 -4.35 14.4 43.1 20.5 54.3 2600 3.20 0.34 9.37 -4.86 14.0 43.1 20.5 54.2 2700 3.20 -0.05 9.18 -5.38 13.6 43.1 20.6 54.2 2800 3.20 -0.50 9.00 -5.90 13.3 43.2 20.7 54.3 2900 3.20 -1.01 8.81 -6.42 12.9 43.2 20.8 54.4 3000 3.20 -1.60 8.63 -6.94 12.5 43.2 20.9 54.7 3100 3.20 -2.28 8.68 -7.17 12.5 43.2 20.9 55.1 3200 3.20 -3.04 8.74 -7.39 12.4 43.2 21.0 55.6 3300 3.20 -3.86 8.79 -7.62 12.4 43.2 21.0 56.1 3400 3.20 -4.73 8.85 -7.85 12.3 43.2 21.1 56.7 3500 3.20 -5.63 8.90 -8.08 12.3 43.3 21.1 57.3 3600 3.20 -6.54 8.95 -8.30 12.2 43.3 21.1 57.9 3700 3.20 -7.45 9.01 -8.53 12.2 43.3 21.2 58.6 3800 3.20 -8.34 9.06 -8.76 12.1 43.3 21.2 59.1 3900 3.20 -9.20 9.12 -8.98 12.1 43.3 21.3 59.6 4000 3.20 -10.00 9.17 -9.21 12.0 43.3 21.3 60.0 4100 3.20 -10.74 9.20 -9.79 11.8 43.3 21.3 60.3 4200 3.20 -11.43 9.22 -10.38 11.6 43.3 21.2 60.5 4300 3.20 -12.06 9.25 -10.96 11.3 43.3 21.2 60.5 4400 3.20 -12.66 9.27 -11.54 11.1 43.3 21.1 60.5 4500 3.20 -13.23 9.30 -12.13 10.9 43.3 21.1 60.3 4600 3.20 -13.78 9.32 -12.71 10.7 43.2 21.1 60.1 4700 3.20 -14.33 9.35 -13.29 10.5 43.2 21.0 59.7 4800 3.20 -14.87 9.37 -13.87 10.2 43.2 21.0 59.3 4900 3.20 -15.43 9.40 -14.46 10.0 43.2 20.9 58.8 5000 3.20 -16.00 9.42 -15.04 9.8 43.2 20.9 58.2 5100 3.20 -16.60 9.84 -15.58 9.7 43.2 20.8 57.5 5200 3.20 -17.25 10.27 -16.12 9.6 43.2 20.7 56.8 5300 3.20 -17.94 10.69 -16.66 9.5 43.1 20.6 55.9 5400 3.20 -18.70 11.11 -17.20 9.4 43.1 20.5 55.0 5500 3.20 -19.52 11.54 -17.74 9.3 43.1 20.5 54.1 5600 3.20 -20.42 11.96 -18.27 9.1 43.1 20.4 53.0 5700 3.20 -21.41 12.38 -18.81 9.0 43.1 20.3 52.0 5800 3.20 -22.49 12.80 -19.35 8.9 43.0 20.2 50.8 5900 3.20 -23.69 13.23 -19.89 8.8 43.0 20.1 49.6 6000 3.20 -25.00 13.65 -20.43 8.7 43.0 20.0 48.4
T1G6001528-Q3 dc ? 6 ghz 18 w gan rf power transistor preliminary data sheet: rev - a 06/14/2011 - 6 of 15 - disclaimer: sub j ect to chan g e without notice typical performance s-parameter smith chart s-parameters v ds = 28v, i dq = 50ma 2 5 10 20 50 j2 -j2 0 j5 -j5 0 j10 -j10 0 j20 -j20 0 j50 -j50 0 s22 s11 6000mhz 100mhz small signal gain maximum stable gain of t1g6001528q3 v ds =28v,i dq =50ma 0 1000 2000 3000 4000 5000 6000 10 15 20 25 30 35 freq. [mhz] msg [db] ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ?
T1G6001528-Q3 dc ? 6 ghz 18 w gan rf power transistor preliminary data sheet: rev - a 06/14/2011 - 7 of 15 - disclaimer: sub j ect to chan g e without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? typical performance (cont.) performance is measured at dut reference plane 26 28 30 32 34 36 38 40 42 44 16 17 18 19 20 21 22 23 24 26 28 30 32 34 36 38 40 42 44 0 10 20 30 40 50 60 70 80 26 28 30 32 34 36 38 40 42 44 0 10 20 30 40 50 60 70 80 pout [dbm] gain [db] gain, deff., and pae vs. pout freq.=1ghz, v ds =28v, i dq =50ma; cw deff. & pae [%] gain deff. pae z s = 6.95 + j12.03 z l = 15.09 - j1.19 26 28 30 32 34 36 38 40 42 44 14 15 16 17 18 19 20 21 22 26 28 30 32 34 36 38 40 42 44 0 10 20 30 40 50 60 70 80 26 28 30 32 34 36 38 40 42 44 0 10 20 30 40 50 60 70 80 pout [dbm] gain [db] gain, deff., and pae vs. pout freq.=2ghz, v ds =28v, i dq =50ma; cw deff. & pae [%] gain deff. pae z s = 3.17 + j2.69 z l = 13.00 - j0.51 26 28 30 32 34 36 38 40 42 44 10 11 12 13 14 15 16 17 18 26 28 30 32 34 36 38 40 42 44 0 10 20 30 40 50 60 70 80 26 28 30 32 34 36 38 40 42 44 0 10 20 30 40 50 60 70 80 pout [dbm] gain [db] gain, deff., and pae vs. pout freq.=3ghz, v ds =28v, i dq =50ma; cw deff. & pae [%] gain deff. pae z s = 2.85 - j1.71 z l = 8.34 - j5.73 26 28 30 32 34 36 38 40 42 44 10 11 12 13 14 15 16 17 18 26 28 30 32 34 36 38 40 42 44 0 10 20 30 40 50 60 70 80 26 28 30 32 34 36 38 40 42 44 0 10 20 30 40 50 60 70 80 pout [dbm] gain [db] gain, deff., and pae vs. pout freq.=4ghz, v ds =28v, i dq =50ma; cw deff. & pae [%] gain deff. pae z s = 3.38 - j9.21 z l = 9.35 - j7.76 26 28 30 32 34 36 38 40 42 44 6 7 8 9 10 11 12 13 14 26 28 30 32 34 36 38 40 42 44 0 10 20 30 40 50 60 70 80 26 28 30 32 34 36 38 40 42 44 0 10 20 30 40 50 60 70 80 pout [dbm] gain [db] gain, deff., and pae vs. pout freq.=5ghz, v ds =28v, i dq =50ma; cw deff. & pae [%] gain deff. pae z s = 5.18 - j16.49 z l = 10.23 - j10.41 26 28 30 32 34 36 38 40 42 44 6 7 8 9 10 11 12 13 14 26 28 30 32 34 36 38 40 42 44 0 10 20 30 40 50 60 70 80 26 28 30 32 34 36 38 40 42 44 0 10 20 30 40 50 60 70 80 pout [dbm] gain [db] gain, deff., and pae vs. pout freq.=6ghz, v ds =28v, i dq =50ma; cw deff. & pae [%] gain deff. pae z s = 4.24 - j16.89 z l = 20.68 - j18.80
T1G6001528-Q3 dc ? 6 ghz 18 w gan rf power transistor preliminary data sheet: rev - a 06/14/2011 - 8 of 15 - disclaimer: sub j ect to chan g e without notice typical performance (cont.) performance measured in triquint?s 5.0 ghz to 6.0 ghz evaluation board at 3 db compression ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? -40 -20 0 20 40 60 80 58 58.5 59 59.5 60 60.5 61 61.5 62 temperature (c) draineff. (%) drain efficiency vs.temperature, 5400 mhz, 3db compression v ds =28v, i dq =50ma; pulse: 100 s, 20% -40 -20 0 20 40 60 80 5 5.5 6 6.5 7 7.5 8 8.5 9 temperature (c) gain (db) gain vs.temperature, 5400 mhz, 3db compression v ds =28v, i dq =50ma; pulse: 100 s, 20% 25 -40 -20 0 20 40 60 80 21 21.5 22 22.5 23 23.5 24 24.5 temperature (c) power (w) power vs.temperature, 5400 mhz, 3db compression v ds =28v, i dq =50ma; pulse: 100 s, 20%
T1G6001528-Q3 dc ? 6 ghz 18 w gan rf power transistor preliminary data sheet: rev - a 06/14/2011 - 9 of 15 - disclaimer: sub j ect to chan g e without notice evaluation board performance: 5 to 6 ghz ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? 5 5.2 5.4 5.6 5.8 6 45 48 51 54 57 60 63 66 69 frequency (ghz) evb test data, v ds =28v, i dq =50ma; pulse: 100 s, 20% draineff (%) pae (%) 5 5.2 5.4 5.6 5.8 6 15 16 17 18 19 20 21 22 23 power [w] frequency [ghz] evb test data, v ds =28v, i dq =50ma; pulse: 100 s, 20% 5 5.2 5.4 5.6 5.8 6 6 6.25 6.5 6.75 7 7.25 7.5 7.75 8 gain [ db ] power (w) gain (db)
T1G6001528-Q3 dc ? 6 ghz 18 w gan rf power transistor preliminary data sheet: rev - a 06/14/2011 - 10 of 15 - disclaimer: sub j ect to chan g e without notice application circuit bias-up procedure bias-down procedure vg set to -5.0v turn off rf signal vd set to 28 v turn off vd and wait 1 second to allow drain capacitor dissipation adjust vg more positive until quiescent id is 50 ma. this will be ~ vg = -3.7 v typical turn off vg apply rf signal rf in l5 vd l1 r1 c2 c3 vg rf out c7 c8 c4 c5 c6 c9 c10 c11 c1 c12 imn omn T1G6001528-Q3 ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ?
T1G6001528-Q3 dc ? 6 ghz 18 w gan rf power transistor preliminary data sheet: rev - a 06/14/2011 - 11 of 15 - disclaimer: sub j ect to chan g e without notice pin description pin symbol description 1 vd/ rf out drain voltage/ rf output matched to 50 ohms; see application circuit on page 9 as an example. 2 vg/rf in gate voltage/ rf input matched to 50 ohms; see application circuit on page 9 as an example 3 flange source connected to ground; see app lication circuit on page 9 as an example. top view bottom view 1 2 3 1 2 the T1G6001528-Q3 will be marked with the ?1528? designator an d a lot code marked below the part designator. the ?yy? represents the last two digits of the year the part was manufactured, the ?ww? is the work week, and the ?xxxx? is an auto- generated number. ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ?
T1G6001528-Q3 dc ? 6 ghz 18 w gan rf power transistor preliminary data sheet: rev - a 06/14/2011 - 12 of 15 - disclaimer: sub j ect to chan g e without notice applications information evaluation board layout top rf layer is 0.020? thick rogers ro3203, ? r = 3.02. the pad pattern shown has been developed and tested for optimized assembly at triquint semiconductor. the pcb land pattern has been developed to accommodate lead and package tolerances. since surface mount proce sses vary from company to company, careful process development is recommended. for further technical information, refer to the T1G6001528-Q3 product information page. c7 l1 c6 c11 c5 c9 c10 c1 c12 c2 c3 c4 c8 r1 l2 bill of material ref des value description manufacturer part number c1, c7, c12 15 pf cap, 0402, 500 v, 5%, p90 atc 100a150jw500xc c2 22 pf cap, 0603, 500 v, 5%, p90 atc 100a220jw500xc c3, c8 0.01 uf cap, 1206, 100 v, 10%, x7r kemet c1206c103k1ractu c4, c9 0.1 uf cap, 1206, 100 v, 10%, x7r kemet c1206c104k1ractu c5, c10 1.0 uf cap, 1812, 100 v, 10%, x7r avx 18121c105kat2a c6, c11 22 uf cap, d, 35v, 10%, smd kemet t491d226k035at l1 5.4 nh ind, 0906, 1.6a, 5%, smd coilcraft 0906-5jl l2 9.85 nh ind, 1606, 1.6a, 5%, smd coilcraft 1606-9jlb r1 12.1ohms res, 1206, 0.1 w, 5%, smd vishay crc120612r1fkea ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ?
T1G6001528-Q3 dc ? 6 ghz 18 w gan rf power transistor preliminary data sheet: rev - a 06/14/2011 - 13 of 15 - disclaimer: sub j ect to chan g e without notice mechanical information package information and dimensions all dimensions are in millimeters. this package is lead-free/rohs-compliant. the package base is cumo and the plating material on the leads is niau. it is compatible with both lead-free (maximum 260 c reflow temperature) and tin-lead (maximum 245 c reflow temperature) soldering processes. .178 1.270 1.270 .686 5.080 .508 3.835 .127 .762 x 45.0 chamfer 4.064 8.126 2.413 +.000 -.203 ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ?
T1G6001528-Q3 dc ? 6 ghz 18 w gan rf power transistor preliminary data sheet: rev - a 06/14/2011 - 14 of 15 - disclaimer: sub j ect to chan g e without notice product compliance information esd information esd rating: class 1a value: 250 v test: human body model (hbm) standard: jedec standard jesd22-a114 solderability compatible with the latest version of j-std-020, lead free solder, 260 c this part is compliant with eu 2002/95/ec rohs directive (restrictions on th e use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp-a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free msl rating level 3 at +260 c convection reflow the part is rated moisture se nsitivity level 3 at 260c per jedec standard ipc/jedec j-std-020. eccn us department of commerce ear99 recommended soldering temperature profile ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ?
T1G6001528-Q3 dc ? 6 ghz 18 w gan rf power transistor preliminary data sheet: rev - a 06/14/2011 - 15 of 15 - disclaimer: sub j ect to chan g e without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? contact information for the latest specifications, additional product information, worldwide sales and distribution locations, and information abou t triquint: web: www.triquint.com tel: +1.972.994.8465 email: info-sales@tqs.com fax: +1.972.994.8504 for technical questions and application information: email: info-products@tqs.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding the information contained herein. triquint assumes no responsibility or liability whatso ever for any of the information contained herein. triquint assumes no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provided "as is, where is" and with all faults, and th e entire risk associated with such information is entirely with the user. all information contained herein is subject to change without notice. customers should obtain and verify the latest relevant information before placing orders for triquint products. the information contained herein or any use of such information does not grant, explicitly or implicitly, to any part y any patent rights, licenses, or any other intellectual prope rty rights, whether with regard to such information itself or anything described by such information. triquint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reason ably be expected to cause severe personal injury or death.

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